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  bar 63-02v nov-16-2000 1 silicon pin diode  pin diode for high speed switching of rf signals  low forward resistance, small capacitance small inductance  very low capacitance  for frequencies up to 3 ghz 1 ves05991 2 type marking pin configuration package bar 63-02v gg 1 = c 2 = a sc-79 maximum ratings parameter symbol value unit diode reverse voltage v r 50 v forward current i f 100 ma total power dissipation , t s = 115 c p tot 250 mw junction temperature t j 150 c operating temperature range t op -55 ... 150 c storage temperature t stg -55 ... 150 thermal resistance junction - ambient 1) r thja  220 k/w junction - soldering point r thjs  140 k/w 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 63-02v nov-16-2000 2 electrical characteristics at t a = 25 =c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 50 - - v reverse current v r = 35 v i r - - 10 na forward voltage i f = 100 ma v f - 0.95 1.2 v ac characteristics diode capacitance v r = 0 v, f = 100 mhz v r = 5 v, f = 1 mhz c t - - 0.3 0.21 - 0.3 pf case capacitance f = 1 mhz c c - 0.09 - forward resistance i f = 5 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - 1.2 1 2 -  charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma  rr - 75 - ns series inductance l s - 0.6 - nh
bar 63-02v nov-16-2000 3 forward current i f = f ( t a *; t s ) *): mounted on alumina 15mm x 16.7mm x 0.7m 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f 5 t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bar 63-02v nov-16-2000 4 forward resistance r f = f ( i f ) f = 100mhz ehd07138 f f r ? 10 -2 -1 10 ma 10 -1 10 0 10 1 10 2 10 2 10 0 10 1 diode capacitance c t = f ( v r ) f = 1mhz v ehd07139 r t c 0 0v pf 0.1 0.2 0.3 0.4 0.5 10 20 30 forward current i f = f ( v f ) t a = 25c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1.0 v f -2 10 -1 10 0 10 1 10 2 10 3 10 ma i f


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